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Journal Article

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

MPS-Authors
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Tessarek,  C.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Sarau,  G.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Heilmann,  M.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  S.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Tessarek, C., Goldhahn, R., Sarau, G., Heilmann, M., & Christiansen, S. (2015). Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods. NEW JOURNAL OF PHYSICS, 17: 083047. doi:10.1088/1367-2630/17/8/083047.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-638C-4
Abstract
Vertical oriented GaN microrods were grown by metal-organic vapor phase epitaxy with four different n-type carrier concentration sections above 10(19) cm(-3) along the c-axis. In cathodoluminescence investigations carried out on each section of the microrod, whispering gallery modes can be observed due to the hexagonal symmetry. Comparisons of the spectral positions of the modes from each section show the presence of an energy dependent mode shift, which suggest a carrier-induced refractive index change. The shift of the high energy edge of the near band edge emission points out that the band gap parameter in the analytical expression of the refractive index has to be modified. A proper adjustment of the band gap parameter explains the observed whispering gallery mode shift.