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Journal Article

Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques

MPS-Authors
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Sarau,  G.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Tessarek,  C.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Goebelt,  M.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  S.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Kumar, S., Sarau, G., Tessarek, C., Goebelt, M., Christiansen, S., & Singh, R. (2015). Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques. NANOTECHNOLOGY, 26(33): 335603. doi:10.1088/0957-4484/26/33/335603.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-638E-F
Abstract
High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.