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Self-Catalytic Growth of -Ga2O3 Nanostructures by Chemical Vapor Deposition

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Tessarek,  Christian
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Sarau,  George
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Kumar, S., Tessarek, C., Sarau, G., Christiansen, S., & Singh, R. (2015). Self-Catalytic Growth of -Ga2O3 Nanostructures by Chemical Vapor Deposition. ADVANCED ENGINEERING MATERIALS, 17(5), 709-715. doi:10.1002/adem.201400289.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-63CC-3
Abstract
In this work, we have studied the synthesis of single crystalline self-catalyzed beta gallium oxide (-Ga2O3) nanostructures by chemical vapor deposition technique. We have adopted a new approach to grow the nanostructures instead of using conventional foreign metal nano-catalyst based-approaches. The as-grown nanostructures including nanowires and nanosheets (NSHs) were grown on spin-coated Ga2O3 films. The structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the nanostructures showed monoclinic phase of Ga2O3 and single crystalline structure. Furthermore, high-resolution TEM with a selected area electron diffraction pattern recorded on a single -Ga2O3 nanowire and nanosheet verified their single crystalline nature, having [001] as favorable growth direction. The energy dispersive X-ray spectroscopy-elemental mapping of as-grown nanostructures indicated uniform distribution of Ga and O. Cathodoluminescence imaging and spectrum revealed excellent luminescence characteristics of nanostructures with a broad UV-blue emission band (1.80-4.20eVnm) centered at 2.64eV. This study also highlights the growth mechanism of NSHs. These -Ga2O3 nanostructures have great potential in nanofunctional devices.