English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates

MPS-Authors
/persons/resource/persons201083

Heilmann,  Martin
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201176

Sarau,  George
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201071

Goebelt,  Manuela
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201113

Latzel,  Michael
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201210

Tessarek,  Christian
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201040

Christiansen,  Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

External Resource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Heilmann, M., Sarau, G., Goebelt, M., Latzel, M., Sadhujan, S., Tessarek, C., et al. (2015). Growth of GaN Micro- and Nanorods on Graphene-Covered Sapphire: Enabling Conductivity to Semiconductor Nanostructures on Insulating Substrates. CRYSTAL GROWTH & DESIGN, 15(5), 2079-2086. doi:10.1021/cg5015219.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-63CE-0
Abstract
The self-catalyzed growth of vertically aligned and hexagonally shaped GaN micro- and nanorods on graphene transferred onto sapphire is achieved through metal organic vapor phase epitaxy. However, a great influence of the underlying substrate is evident, since vertically aligned structures with a regular shape could not be grown on graphene transferred to SiO2. The optical properties of the regular GaN nanorods were investigated by spatially and spectrally resolved cathodoluminescence showing defect related emission only near the interface between the sapphire substrate and nanorods but not from their upper part. Micro-raman spectroscopy confirms that the single-layer graphene remains virtually unchanged in terms of the Raman signal, even after undergoing high temperatures (similar to 1200 degrees C) during nanorod growth. Furthermore, Raman mapping demonstrates that GaN structures predominantly grow on defective parts of graphene, giving new insight into the nucleation and growth mechanism of semiconductors on graphene. To validate the conductivity of graphene, when being attached to the sapphire substrate and after the nanorod growth, current voltage investigations were carried out on single, as-grown, GaN nanorods with a nanoprober in a scanning electron microscope. These measurements demonstrate the viability of graphene as a conductive electrode, for example, as a back contact for GaN nanorods grown on insulating sapphire.