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Conference Paper

Photomixing and Photoconductive THz generation improvement in SI-GaAs after Carbon Irradiation

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Preu,  S.
Max Planck Fellow Group, Max Planck Institute for the Science of Light, Max Planck Society;
International Max Planck Research School, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Deshmukh, P., Singh, A., Pal, S., Prabhu, S. S., Mathimalar, S., Nanal, V., et al. (2015). Photomixing and Photoconductive THz generation improvement in SI-GaAs after Carbon Irradiation. In 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ). 345 E 47TH ST, NEW YORK, NY 10017 USA: IEEE.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-643C-E
Abstract
We report significant improvement in pulsed and continuous wave (CW) THz generation when semi insulating GaAs (SI-GaAs) is irradiated with carbon ions. Irradiation reduces the carrier lifetime in SI-GaAs and increases its resistivity. This results in reduced screening effects and lesser heat dissipation in the THz pulse emitter. Reduced lifetime significantly improves the bandwidth of the CW THz system.