English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire

MPS-Authors
/persons/resource/persons201210

Tessarek,  C.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201083

Heilmann,  M.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201040

Christiansen,  S.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

Locator
There are no locators available
Fulltext (public)
There are no public fulltexts available
Supplementary Material (public)
There is no public supplementary material available
Citation

Tessarek, C., Figge, S., Gust, A., Heilmann, M., Dieker, C., Spiecker, E., et al. (2014). Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire. SI, 47(39): 394008. doi:10.1088/0022-3727/47/39/394008.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-64B4-F
Abstract
Self-catalysed and self-organized GaN nanowires were grown on c-, a-, m- and r-plane sapphire by metal-organic vapour phase epitaxy. In dependence on the crystallographic orientation of the sapphire substrate, vertical, tilted and in-plane GaN nanowires were achieved. The nanowire orientation is visualized by scanning electron microscopy and analysed by x-ray diffraction. The influence of the sapphire nitridation step on the nanowire formation is investigated. Spatially and spectrally resolved cathodoluminescence studies are carried out on the GaN nanowires to analyse the influence of the GaN nanowire orientation as well as the presence of both N- and Ga-polar sections in a single nanowire on the optical properties.