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Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

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Pietsch,  Matthias
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Jaeckle,  Sara
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Pietsch, M., Jaeckle, S., & Christiansen, S. (2014). Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 115(4), 1109-1113. doi:10.1007/s00339-014-8405-4.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-65F1-C
Abstract
We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (N (D)). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (V (oc)) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N (D) leads to an increase of V (oc) with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N (D) is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.