Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

Tessarek, C.; Figge, S.; Hommel, D.

doi:10.1088/0022-3727/47/5/055108

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Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes

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Tessarek, C.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Tessarek, C., Figge, S., & Hommel, D. (2014). Colour and multicolour tuning of InGaN quantum dot based light-emitting diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 47(5): 055108. doi:10.1088/0022-3727/47/5/055108.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-664B-D

Abstract

InGaN quantum dots (QDs) formed via spinodal and binodal decomposition are used as an optically active region for light-emitting diodes (LEDs). It is shown that the emission wavelength of the electroluminescence (EL) can be shifted from blue to green by adjusting the deposition time of the InGaN QD layer. A first approach towards a monolithic multicolour emitting diode is presented. Strong difference of the EL on the InGaN QD stacking sequence is observed and is attributed to both low hole concentration and mobility.