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Kinetic study of H-terminated silicon nanowires oxidation in very first stages

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Bashouti,  Muhammad Y.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Bashouti, M. Y., Sardashti, K., Ristein, J., & Christiansen, S. (2013). Kinetic study of H-terminated silicon nanowires oxidation in very first stages. NANOSCALE RESEARCH LETTERS, 8: 41. doi:10.1186/1556-276X-8-41.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-67BD-3
Abstract
Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50A degrees C to 400A degrees C, in short-time spans ranging from 5 to 60 min. At high temperatures (T a parts per thousand yen 200A degrees C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200 degrees C).