Resonant modulational instability and self-induced transmission effects in 
semiconductors: Maxwell-Bloch formalism

Smyrnov, Oleksii A.; Biancalana, Fabio

doi:10.1103/PhysRevB.85.075201

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Resonant modulational instability and self-induced transmission effects in semiconductors: Maxwell-Bloch formalism

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Biancalana, Fabio
Biancalana Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;

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Smyrnov, O. A., & Biancalana, F. (2012). Resonant modulational instability and self-induced transmission effects in semiconductors: Maxwell-Bloch formalism. PHYSICAL REVIEW B, 85(7): 075201. doi:10.1103/PhysRevB.85.075201.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-68FB-2

Abstract

The nonlinear optical properties of semiconductors near an excitonic resonance are investigated theoretically by using the macroscopic J model [Ostreich and Knorr, Phys. Rev. B 48, 17811 (1993); 50, 5717 (1994)] based on the microscopic semiconductor Bloch equations. These nonlinear properties cause modulational instability of long light pulses with large gain and give rise to a self-induced transmission of short light pulses in a semiconductor. By an example of the latter well-studied effect, the validity of the used macroscopic model is demonstrated, and good agreement is found with both existing theoretical and experimental results.