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Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

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Bashouti,  Muhammad Y.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Christiansen,  Silke H.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Bashouti, M. Y., Sardashti, K., Ristein, J., & Christiansen, S. H. (2012). Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 14(34), 11877-11881. doi:10.1039/c2cp41709j.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6943-3
Abstract
Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200 degrees C). At high temperatures (T >= 200 degrees C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.