English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

A precise optical determination of nanoscale diameters of semiconductor nanowires

MPS-Authors
/persons/resource/persons201021

Broenstrup,  G.
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

/persons/resource/persons201040

Christiansen,  S.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

Locator
There are no locators available
Fulltext (public)
There are no public fulltexts available
Supplementary Material (public)
There is no public supplementary material available
Citation

Broenstrup, G., Leiterer, C., Jahr, N., Gutsche, C., Lysov, A., Regolin, I., et al. (2011). A precise optical determination of nanoscale diameters of semiconductor nanowires. NANOTECHNOLOGY, 22(38): 385201. doi:10.1088/0957-4484/22/38/385201.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-6985-F
Abstract
Electrical and optical properties of semiconducting nanowires (NWs) strongly depend on their diameters. Therefore, a precise knowledge of their diameters is essential for any kind of device integration. Here, we present an optical method based on dark field optical microscopy to easily determine the diameters of individual NWs with an accuracy of a few nanometers and thus a relative error of less than 10%. The underlying physical principle of this method is that strong Mie resonances dominate the optical scattering spectra of most semiconducting NWs and can thus be exploited. The feasibility of this method is demonstrated using GaAs NWs but it should be applicable to most types of semiconducting NWs as well. Dark field optical microscopy shows that even slight tapering of the NWs, i.e. diameter variations of a few nanometers, can be detected by a visible color change. Abrupt diameter changes of a few nanometers, as they occur for example when growth conditions vary, can be determined as well. In addition a profound analysis of the elastic scattering properties of individual GaAs NWs is presented theoretically using Mie calculations as well as experimentally by dark field microscopy. This method has the advantage that no vacuum technique is needed, a fast and reliable analysis is possible based on cheap standard hardware.