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Roughness of silicon nanowire sidewalls and room temperature photoluminescence

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Christiansen,  Silke H.
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Sivakov, V. A., Voigt, F., Berger, A., Bauer, G., & Christiansen, S. H. (2010). Roughness of silicon nanowire sidewalls and room temperature photoluminescence. PHYSICAL REVIEW B, 82(12): 125446. doi:10.1103/PhysRevB.82.125446.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-6AAD-2
Abstract
Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in silicon nanowires (SiNWs) that were realized by wet chemical etching of heavily (arsenic, As: 10(20) cm(-3)) and lowly doped (boron, B: 10(15) cm(-3)) single crystalline silicon (Si) wafers. Optical characterization of these SiNWs by PL combined with structural characterization by transmission and scanning electron microscopy strongly suggest that the visible PL at room temperature results from the rough SiNW sidewall structure that is composed of nanoscale features in which quantum confinement effects may occur.