Electron Microscopy Mechanical Testing of Silicon Nanowires Using 
Electrostatically Actuated Tensile Stages

Zhang, Dongfeng; Breguet, Jean-Marc; Clavel, Reymond; Sivakov, Vladimir; Christiansen, Silke; Michler, Johann

doi:10.1109/JMEMS.2010.2044746

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Electron Microscopy Mechanical Testing of Silicon Nanowires Using Electrostatically Actuated Tensile Stages

MPS-Authors

/persons/resource/persons201040

Christiansen, Silke
Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society;
Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Zhang, D., Breguet, J.-M., Clavel, R., Sivakov, V., Christiansen, S., & Michler, J. (2010). Electron Microscopy Mechanical Testing of Silicon Nanowires Using Electrostatically Actuated Tensile Stages. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 19(3), 663-674. doi:10.1109/JMEMS.2010.2044746.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6AF9-5

Abstract

Two types of electrostatically actuated tensile stages for in situ electron microscopy mechanical testing of 1-D nanostructures were designed, microfabricated, and tested. Testing was carried out for mechanical characterization of silicon nanowires (SiNWs). The bulk micromachined stages consist of a combdrive actuator and either a differential capacitive sensor or a clamped-clamped beam force sensor. High-aspect-ratio structures (height/gap = 20) were designed to increase the driving force of the geometrically optimized actuator and the sensitivity of the capacitive sensor. The actuator stiffness is kept low to enable high tensile force to be exerted in the specimen rather than in the suspensions of the comb drive. Individual SiNWs were mounted on the devices by in situ scanning electron microscopy nanomanipulation, and their tensile properties were determined to demonstrate the device capability. The phosphorus-doped SiNWs, which were grown in a bottom-up manner by the vapor-liquid-solid process, show an average Young's modulus of (170.0 +/- 2.4) GPa and a tensile strength of at least 4.2 GPa. Top-down electroless chemically etched SiNWs, with their long axis along the [100] direction, show a fracture strength of 5.4 GPa.