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Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers

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Preu,  S.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;
International Max Planck Research School, Max Planck Institute for the Science of Light, Max Planck Society;

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Malzer,  S.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Doehler,  G. H.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Wang,  L. J.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Preu, S., Renner, F. H., Malzer, S., Doehler, G. H., Wang, L. J., Hanson, M., et al. (2007). Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers. APPLIED PHYSICS LETTERS, 90(21): 212115. doi:10.1063/1.2743400.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6D38-1
Abstract
The authors report on photomixing terahertz sources that overcome the transit time versus RC-time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 mu m as compared to GaAs. In such devices, a terahertz-power output of 1 mu W has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one. (c) 2007 American Institute of Physics.