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Diamagnetic shift of disorder-localized excitons in narrow GaAs/AlGaAs quantum wells

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Malzer,  S.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Doehler,  G. H.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Erdmann, M., Ropers, C., Wenderoth, M., Ulbrich, R. G., Malzer, S., & Doehler, G. H. (2006). Diamagnetic shift of disorder-localized excitons in narrow GaAs/AlGaAs quantum wells. PHYSICAL REVIEW B, 74(12): 125412. doi:10.1103/PhysRevB.74.125412.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-6D86-4
Abstract
A correlation between the diamagnetic shift and transition energy of disorder-localized excitons is observed in magnetomicrophotoluminescence (mu PL) on narrow GaAs/Al0.3Ga0.7As quantum wells (QW's). The QW's were grown by molecular-beam epitaxy without growth interruption at the interfaces. mu PL spectra were obtained in a confocal setup with the magnetic field applied normal to the QW plane. The lowest-energy exciton states have the smallest diamagnetic coefficients; the exciton diamagnetic shift in the localized exciton tail of the QW emission spectra increases by a factor of 2 as a function of transition energy. The positive correlation between diamagnetic shift and emission energy reveals exciton localization by short-range correlated interface disorder.