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Photoluminescence of n-doped double quantum well - electron subbands under influence of in-plane magnetic fields

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Doehler,  G. H.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Malzer,  S.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Orlita, M., Byszewski, M., Doehler, G. H., Grill, M., Hlidek, P., Malzer, S., et al. (2006). Photoluminescence of n-doped double quantum well - electron subbands under influence of in-plane magnetic fields. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 34(1-2), 284-287.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6D8A-B
Abstract
We report on photoluminescence (PL) measurements of a GaAs/AlGaAs double quantum well (DQW) in high magnetic fields. Measurements were carried out on a selectively contacted symmetric p-delta n-DQW-delta n-p structure, which allows a variation of the electron density in DQW by a p-n bias and simultaneously a tilting of DQW, when a p-p bias is applied. Attention was paid to phenomena in in-plane magnetic fields, theoretically studied by Huang and Lyo (HL), [Phys. Rev. B 59, (1999) 7600]. In this paper, we compare our results for both symmetric and asymmetric DQWs with the theoretical model made by HL. Whereas the spectra from a symmetric DQW fully confirmed the theoretical predictions, the results gained from DQW with an electric-field-induced asymmetry did not allow a proper study of anticipated effects. The reasons for that are discussed. (c) 2006 Elsevier B.V. All rights reserved.