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A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 mu m based on ordering in InGaAsP

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Malzer,  S
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Dohler,  GH
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Kramer, S., Neumann, S., Prost, W., Tegude, F., Malzer, S., & Dohler, G. (2006). A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 mu m based on ordering in InGaAsP. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 32(1-2), 554-557.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6DA4-F
Abstract
Recently we have shown that the quaternary semiconductor InGaAsP spontaneously forms a mono-atomic superlattice oriented in [111](B)-direction if grown under suitable conditions by MOVPE. The superlattice-induced reduction of the crystal-symmetry leads to a much larger polarisation anisotropy as in ternary III/V-semiconductors, as the ordering affects both the group-III- and the group-V-sublattice. In this contribution we report on an optoelectronic switch, based on the absorption anisotropy for [110]- and [1 (1) over bar0]-polarised light. Switching between "on" and "off" depends on the polarisation angle only, but hardly on the intensity. (c) 2006 Elsevier B.V. All rights reserved.