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Conference Paper

Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide

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Malzer,  S
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Dohler,  GH
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Loth, S., Wenderoth, M., Winking, L., Ulbrich, R., Malzer, S., & Dohler, G. (2006). Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(3B), 2193-2196.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-6DA8-7
Abstract
Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near {110}-surfaces ill gallium arsenide (GaAs). At appropriate bias voltages the circularly symmetric contrast normally observed for charged defects evolves into a pronounced triangular shaped protrusion. Comparing dopants at different depths under the surface, we find a linear shift of the associated conductivity maximum along (112) directions. Comparative Studies of Carbon and Zinc acceptors in a modulation-doped heterostructure reveal that both dopants act similarly. The experimental findings Suggest that the highly anisotropic features induced by acceptors resemble a bulk property of the GaAs crystal prominently demonstrating its Ziricblende symmetry.