Low-temperature growth of silicon nanotubes and nanowires on amorphous 
substrates

Mbenkum, Beri N.; Schneider, Andreas S.; Schütz, Gisela; Xu, C.; Richter, Gunther; van Aken, Peter A.; Majer, Günter; Spatz, Joachim P.

doi:10.1021/nn900969y

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Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates

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Mbenkum, Beri N.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Majer, Günter
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Spatz, Joachim P.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;
Biophysical Chemistry, Institute of Physical Chemistry, University of Heidelberg, 69120 Heidelberg, Germany;

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Citation

Mbenkum, B. N., Schneider, A. S., Schütz, G., Xu, C., Richter, G., van Aken, P. A., et al. (2010). Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates. ACS Nano, 4(4), 1805-1812. doi:10.1021/nn900969y.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3B88-9

Abstract

Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10−20 nm), enabling Si 1D growth at temperatures as low as 320 °C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 °C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 °C. A mixture of SiNTs and SiNWs is observed at 450 °C and only SiNWs grow at 480 °C.