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In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

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Klemm,  Hagen
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Peschel,  Gina
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Schmidt,  Thomas
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Cooil, S. P., Mazzola, F., Klemm, H., Peschel, G., Niu, Y. R., Zakharov, A. A., et al. (2017). In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. ACS Nano, 11(2), 1683-1688. doi:10.1021/acsnano.6b07359.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002C-C883-8
Abstract
We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.