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Journal Article

Valence instability in the bulk and at the surface of the antiferromagnet SmRh2Si2


Geibel,  C.
Christoph Geibel, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chikina, A., Generalov, A., Kummer, K., Guettler, M., Antonov, V. N., Kucherenko, Y., et al. (2017). Valence instability in the bulk and at the surface of the antiferromagnet SmRh2Si2. Physical Review B, 95(15): 155127, pp. 1-11. doi:10.1103/PhysRevB.95.155127.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002D-499A-3
Using resonant angle-resolved photoemission spectroscopy and electron band-structure calculations, we explore the electronic structure and properties of Sm atoms at the surface and in the bulk of the antiferromagnet SmRh2Si2. We show that the Sm atoms reveal weak mixed-valent behavior both in the bulk and at the surface. Although trivalent 4 f emission strongly dominates, a small divalent 4 f signal near the Fermi energy can be clearly resolved for surface and bulk Sm atoms. This behavior is quite different to most other Sm-based materials which typically experience a surface valence transition to a divalent state of Sm atoms at the surface. This phenomenon is explained in analogy to the isostructural Ce compound, where strong 4 f hybridization stabilizes mixed-valent ground state both in the bulk and at the surface, and which were described in the light of the single-impurity Anderson model. Implications for other RERh2Si2 (RE = rare-earth elements) compounds are discussed.