Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO 
substrates

Wang, Lei; Xiong, Kanglin; He, Yangkun; Huang, Xing; Xia, Jing; Li, Xuanze; Gu, Yiyi; Cheng, Huaqiu; Meng, Xiangmin

doi:10.1039/c7ce00428a

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Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

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Huang, Xing
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences;
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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引用

Wang, L., Xiong, K., He, Y., Huang, X., Xia, J., Li, X., Gu, Y., Cheng, H., & Meng, X. (2017). Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates. CrystEngComm, 19(17), 2294-2299. doi:10.1039/c7ce00428a.

引用: https://hdl.handle.net/11858/00-001M-0000-002D-7AE3-7

要旨

In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on singlecrystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2−1−10] ZnO_WZ//[2−1−10] ZnS_WZ//[10−1] ZnS_ZB and (0001) ZnO_WZ// (0001) ZnS_WZ//(111) ZnS_ZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.