Deutsch
 
Benutzerhandbuch Datenschutzhinweis Impressum Kontakt
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Ultrafast Electronic Band Gap Control in an Excitonic Insulator

MPG-Autoren
/persons/resource/persons126984

Mor,  Selene
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons81237

Herzog,  Marc
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Institute for Physics and Astronomy, University of Potsdam;

/persons/resource/persons22128

Stähler,  Julia
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

Externe Ressourcen
Es sind keine Externen Ressourcen verfügbar
Volltexte (frei zugänglich)

1608.05586.pdf
(Preprint), 515KB

PhysRevLett.119.086401.pdf
(Verlagsversion), 533KB

Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Mor, S., Herzog, M., Golež, D., Werner, P., Eckstein, M., Katayama, N., et al. (2017). Ultrafast Electronic Band Gap Control in an Excitonic Insulator. Physical Review Letters, 119(8): 086401. doi:10.1103/PhysRevLett.119.086401.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-002D-9D6E-1
Zusammenfassung
We report on the nonequilibrium dynamics of the electronic structure of the layered semiconductor Ta2NiSe5 investigated by time- and angle-resolved photoelectron spectroscopy. We show that below the critical excitation density of FC=0.2  mJ cm−2, the band gap narrows transiently, while it is enhanced above FC. Hartree-Fock calculations reveal that this effect can be explained by the presence of the low-temperature excitonic insulator phase of Ta2NiSe5, whose order parameter is connected to the gap size. This work demonstrates the ability to manipulate the band gap of Ta2NiSe5 with light on the femtosecond time scale.