Trapping of D in SiC and damage due to implantation

Siegele, R.; Withrow, S.P.; Roth, J.; Scherzer, B. M. U.

doi:10.1016/0022-3115(90)90183-N

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Trapping of D in SiC and damage due to implantation

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Siegele, R.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Roth, J.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Scherzer, B. M. U.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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https://doi.org/10.1016/0022-3115(90)90183-N
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Siegele, R., Withrow, S., Roth, J., & Scherzer, B. M. U. (1990). Trapping of D in SiC and damage due to implantation. Journal of Nuclear Materials, 176-177, 1010-1017. doi:10.1016/0022-3115(90)90183-N.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-8CDA-3

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