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Trapping of D in SiC and damage due to implantation

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Siegele,  R.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Roth,  J.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Scherzer,  B. M. U.
Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society;

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Siegele, R., Withrow, S., Roth, J., & Scherzer, B. M. U. (1990). Trapping of D in SiC and damage due to implantation. Journal of Nuclear Materials, 176-177, 1010-1017. doi:doi.org/10.1016/0022-3115(90)90183-N.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002E-8CDA-3
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