English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

MPS-Authors

Moschetti,  G.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Thome,  F.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Ohlrogge,  M.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Goliasch,  J.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Schafer,  F.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Aja,  B.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Leuther,  A.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Schlechtweg,  M.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Seelmann-Eggebert,  M.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Ambacher,  O.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Wieching,  G.
Max Planck Institute for Radio Astronomy, Max Planck Society;

Kotiranta, 
Max Planck Institute for Radio Astronomy, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Moschetti, G., Thome, F., Ohlrogge, M., Goliasch, J., Schafer, F., Aja, B., et al. (2016). Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature. IEEE Transactions on Microwave Theory Techniques, 64, 3139-3150. doi:10.1109/TMTT.2016.2598168.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-1450-3
Abstract
There is no abstract available