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Fast Optical Control of Spin in Semiconductor Interfacial Structures

MPG-Autoren
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Nadvornik,  Lukas
Physical Chemistry, Fritz Haber Institute, Max Planck Society;
Institute of Physics ASCR;

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Volltexte (frei zugänglich)

PhysRevApplied.8.034022.pdf
(Verlagsversion), 666KB

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Zitation

Nadvornik, L., Surýnek, M., Olejník, K., Novák, V., Wunderlich, J., Trojánek, F., et al. (2017). Fast Optical Control of Spin in Semiconductor Interfacial Structures. Physical Review Applied, 8(03): 034022. doi:10.1103/PhysRevApplied.8.034022.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-002E-068C-0
Zusammenfassung
We report on a picosecond-fast optical removal of spin polarization from a self-confined photocarrier system at an undoped GaAs/(Al,Ga)As interface possessing superior long-range and high-speed spin-transport properties. We employ a modified resonant-spin-amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photoinjected into the system.