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Stress originating from nanovoids in hydrogenated amorphous semiconductors

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Wang,  Zumin
School of Materials Science and Engineering, Tianjin University ;
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Flötotto,  David
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;
Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA;

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Mittemeijer,  Eric Jan
Institute for Materials Science, University of Stuttgart;
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Wang, Z., Flötotto, D., & Mittemeijer, E. J. (2017). Stress originating from nanovoids in hydrogenated amorphous semiconductors. Journal of Applied Physics, 121(9): 095307. doi:10.1063/1.4977853.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-08D3-B
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