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Heteroepitaxial growth of tetragonal Mn2.7-xFexGa1.3 (0 <= x <= 1.2) Heusler films with perpendicular magnetic anisotropy

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Kalache,  Adel
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Markou,  Anastasios
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Sahoo,  Roshnee
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher,  Gerhard H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Kalache, A., Markou, A., Selle, S., Hoeche, T., Sahoo, R., Fecher, G. H., et al. (2017). Heteroepitaxial growth of tetragonal Mn2.7-xFexGa1.3 (0 <= x <= 1.2) Heusler films with perpendicular magnetic anisotropy. APL Materials, 5(9): 096102, pp. 1-9. doi:10.1063/1.4991468.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-17A5-B
Abstract
This work reports on the structural and magnetic properties of Mn2.7-xFexGa1.3 Heusler films with different Fe content x (0 <= x <= 1.2). The films were deposited heteroepitaxially on MgO single crystal substrates, by magnetron sputtering. Mn2.7-xFexGa1.3 films with the thickness of 35 nm were crystallized in a tetragonal D0(22) structure with (001) preferred orientation. Tunable magnetic properties were achieved by changing the Fe content x. Mn2.7-xFexGa1.3 thin films exhibit high uniaxial anisotropy K-u >= 1.4MJ/m(3), coercivity from 0.95 to 0.31 T, and saturation magnetization from 290 to 570 kA/m. The film with Mn1.6Fe1.1Ga1.3 composition shows high Ku of 1.47 MJ/m(3) and energy product (BH)(max) of 37 kJ/m(3) at room temperature. These findings demonstrate that Mn2.7-xFexGa1.3 films have promising properties for mid-range permanent magnet and spintronic applications. (C) 2017 Author(s).