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Half-metallic compensated ferrimagnetism with a tunable compensation point over a wide temperature range in the Mn-Fe-V-Al Heusler system

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Stinshoff,  Rolf
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fecher,  Gerhard H.
Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chadov,  Stanislav
Stanislav Chadov, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Nayak,  Ajaya K.
Ajaya Nayak, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ouardi,  Siham
Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Stinshoff, R., Fecher, G. H., Chadov, S., Nayak, A. K., Balke, B., Ouardi, S., et al. (2017). Half-metallic compensated ferrimagnetism with a tunable compensation point over a wide temperature range in the Mn-Fe-V-Al Heusler system. AIP Advances, 7(10): 105009, pp. 1-15. doi:10.1063/1.5000351.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-31E4-D
Abstract
The cubic Heusler compound Mn1.5FeV0.5Al with the L2(1) Heusler structure is the first fully compensated half-metallic ferrimagnet with 24 valence electrons. The ferrimagnetic state can be tuned by changing the composition such that the compensation point appears at finite temperatures ranging from 0 K up to 226 K, while retaining half-metallicity in the system. In this paper, the structural, magnetic and transport properties of the Mn-Fe-V-Al system are discussed. Magnetic reversal and a change of sign of the anomalous Hall effect were observed at the compensation point, which gives rise to a sublattice spin-crossing. These materials present new possibilities for potential spintronic devices because of their advantageous properties such as imperceptibility to external fields, lower power consumption and ultrafast switching in the THz region. (C) 2017 Author(s).