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Mapping of Sn dopant in hematite photoanodes by STEM-EELS and atom probe tomography

MPS-Authors
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Zhang,  Siyuan
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Li,  Tong
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Gault,  Baptiste
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Breitbach,  Benjamin
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Zhang, S., Li, T., Gault, B., Hufnagel, A., Hoffmann, R., Harzer, T., et al. (2017). Mapping of Sn dopant in hematite photoanodes by STEM-EELS and atom probe tomography. Poster presented at EDGE 2017: Enhanced Data Generated by Electrons, 8th International Workshop on Electron Energy Loss Spectroscopy and Related Techniques, Okuma, Okinawa, Japan.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002E-A5A5-4
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