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Spin dynamics of FeGa3− xGex studied by electron spin resonance

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Koo,  Bonho
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Burkhardt,  Ulrich
Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Baenitz,  Michael
Michael Baenitz, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Sichelschmidt,  Jörg
Jörg Sichelschmidt, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Koo, B., Bader, K., Burkhardt, U., Baenitz, M., Gille, P., & Sichelschmidt, J. (2018). Spin dynamics of FeGa3− xGex studied by electron spin resonance. Journal of Physics: Condensed Matter, 30(4): 045601, pp. 1-7. doi:10.1088/1361-648X/aaa18a.


Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-A051-8
Abstract
The intermetallic semiconductor FeGa 3 acquires itinerant ferromagnetism upon electron doping by a partial replacement of Ga with Ge. We studied the electron spin resonance (ESR) of high-quality single crystals of FeGa 3− x Ge x for x from 0 up to 0.162 where ferromagnetic order is observed. For x   =  0 we observed a well-defined ESR signal, indicating the presence of pre-formed magnetic moments in the semiconducting phase. Upon Ge doping the occurrence of itinerant magnetism clearly affects the ESR properties below  ≈40 K, whereas at higher temperatures an ESR signal as seen in FeGa 3 prevails independent on the Ge content. The present results show that the ESR of FeGa 3− x Ge x is an appropriate and direct tool to investigate the evolution of 3d-based itinerant magnetism.