English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Spin dynamics of FeGa3− xGex studied by electron spin resonance

MPS-Authors
/persons/resource/persons213907

Koo,  Bonho
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126556

Burkhardt,  Ulrich
Ulrich Burkhardt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126528

Baenitz,  Michael
Michael Baenitz, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126851

Sichelschmidt,  Jörg
Jörg Sichelschmidt, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

Locator
There are no locators available
Fulltext (public)
There are no public fulltexts available
Supplementary Material (public)
There is no public supplementary material available
Citation

Koo, B., Bader, K., Burkhardt, U., Baenitz, M., Gille, P., & Sichelschmidt, J. (2018). Spin dynamics of FeGa3− xGex studied by electron spin resonance. Journal of Physics: Condensed Matter, 30(4): 045601, pp. 1-7. doi:10.1088/1361-648X/aaa18a.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002E-A051-8
Abstract
The intermetallic semiconductor FeGa 3 acquires itinerant ferromagnetism upon electron doping by a partial replacement of Ga with Ge. We studied the electron spin resonance (ESR) of high-quality single crystals of FeGa 3− x Ge x for x from 0 up to 0.162 where ferromagnetic order is observed. For x   =  0 we observed a well-defined ESR signal, indicating the presence of pre-formed magnetic moments in the semiconducting phase. Upon Ge doping the occurrence of itinerant magnetism clearly affects the ESR properties below  ≈40 K, whereas at higher temperatures an ESR signal as seen in FeGa 3 prevails independent on the Ge content. The present results show that the ESR of FeGa 3− x Ge x is an appropriate and direct tool to investigate the evolution of 3d-based itinerant magnetism.