English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3)

MPS-Authors
/persons/resource/persons136321

Hieke,  Stefan Werner
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons75388

Dehm,  Gerhard
Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons76047

Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;
Materials Analytics, RWTH Aachen University, Kopernikusstrasse 10, Aachen, Germany;

External Resource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Hieke, S. W., Dehm, G., & Scheu, C. (2017). Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3). Acta Materialia, 140, 355-365. doi:10.1016/j.actamat.2017.08.050.


Cite as: http://hdl.handle.net/21.11116/0000-0000-7341-5
Abstract
There is no abstract available