Logarithmic singularities and quantum oscillations in magnetically doped 
topological insulators

Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K. -F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

doi:10.1103/PhysRevB.97.085151

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Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

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Sodemann, Inti
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.085151
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Citation

Nandi, D., Sodemann, I., Shain, K., Lee, G. H., Huang, K.-.-F., Chang, C.-Z., et al. (2018). Logarithmic singularities and quantum oscillations in magnetically doped topological insulators. Physical Review B, 97(8): 085151. doi:10.1103/PhysRevB.97.085151.

Cite as: https://hdl.handle.net/21.11116/0000-0000-D5A6-4

Abstract

We report magnetotransport measurements on magnetically doped (Bi, Sb)(2)Te-3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.