Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony; Richter, Claudia; Hoffmann, Michael; Wirth, Steffen; Jones, Jacob L.; Mikolajick, Thomas; Schroeder, Uwe

doi:10.1002/aelm.201700489

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Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO₂

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Wirth, Steffen
Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Park, M. H., Chung, C.-C., Schenk, T., Richter, C., Hoffmann, M., Wirth, S., et al. (2018). Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO₂. Advanced Electronic Materials, 4(4): 1700489, pp. 1-8. doi:10.1002/aelm.201700489.

Cite as: https://hdl.handle.net/21.11116/0000-0001-45DE-8

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