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Interface engineering and nanoscale characterization of Zn(S,O) alternative buffer layer for CIGS thin film solar cells

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Soni,  Purvesh Upendrakumar
Interface Design in Solar Cells, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Cojocaru-Mirédin,  Oana
Interface Design in Solar Cells, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Raabe,  Dierk
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Soni, P. U., Cojocaru-Mirédin, O., & Raabe, D. (2015). Interface engineering and nanoscale characterization of Zn(S,O) alternative buffer layer for CIGS thin film solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Piscataway Township, NJ, USA: Institute of Electrical and Electronics Engineers Inc.


Cite as: http://hdl.handle.net/21.11116/0000-0001-BADE-4
Abstract
The buffer layers in Cu(In,Ga)Se2 solar cells play a crucial role in device performance, although their thickness is only a few tens of nanometers. Moreover, often Zn(S,O) alternative buffer layers have been studied in view of their structure, band alignment, and optical properties, but not much work exists on their nanoscale chemical properties. This work focuses on the chemical characterization of Zn(S,O) using x-ray photoelectron spectroscopy for determination of the Zn(S,O) and Cu(In,Ga)Se2 depth composition, and atom probe tomography for probing the nano-scale chemical fluctuations at the Zn(S,O)/Cu(In,Ga)Se2 interface. The Zn(O,S) buffer layer was deposited by RF magnetron sputtering. The aim is to study the nanoscale concentration changes and atomic interdiffusion between CIGS and Zn(S,O) after sputter deposition at room temperature and after post-deposition heat treatment at 200°C. © 2015 IEEE.