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Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies

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Krzywiecki,  Maciej
Institute of Physics – CSE, Silesian University of Technology, B. Krzywoustego 2, 44–100 Gliwice, Poland;
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Sarfraz,  Adnan
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Genchev,  Georgi
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Erbe,  Andreas
Department of Materials Science and Engineering, NTNU - Norwegian University of Science and Technology, 7491 Trondheim, Norway;
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Grządziel, L., Krzywiecki, M., Szwajca, A., Sarfraz, A., Genchev, G., & Erbe, A. (2018). Detection of intra-band gap defects states in spin-coated sol-gel SnOx nanolayers by photoelectron spectroscopies. Journal of Physics D: Applied Physics, 51: 315301. doi:10.1088/1361-6463/aacf3a.


Cite as: http://hdl.handle.net/21.11116/0000-0001-B69E-0
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