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Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography

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Grunze,  M.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Citation

Geyer, W., Stadler, V., Eck, W., Zharnikov, M., Gölzhäuser, A., & Grunze, M. (1999). Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography. Applied Physics Letters, 75(16), 2401-2403. doi:10.1063/1.125027.


Cite as: https://hdl.handle.net/21.11116/0000-0001-BA43-2
Abstract
We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold.