Electron-induced crosslinking of aromatic self-assembled monolayers: Negative 
resists for nanolithography

Geyer, W.; Stadler, V.; Eck, W.; Zharnikov, M.; Gölzhäuser, A.; Grunze, M.

doi:10.1063/1.125027

Datensatz

DATENSATZ AKTIONENEXPORT

Zur Ablage hinzufügen

Lokale TagsFreigabegeschichteDetailsÜbersicht

Freigegeben

Zeitschriftenartikel

Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography

MPG-Autoren

/persons/resource/persons211638

Grunze, M.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

Externe Ressourcen

http://aip.scitation.org/doi/pdf/10.1063/1.125027
(beliebiger Volltext)

https://doi.org/10.1063/1.125027
(beliebiger Volltext)

Volltexte (beschränkter Zugriff)

Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.

Volltexte (frei zugänglich)

Es sind keine frei zugänglichen Volltexte in PuRe verfügbar

Ergänzendes Material (frei zugänglich)

Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Zitation

Geyer, W., Stadler, V., Eck, W., Zharnikov, M., Gölzhäuser, A., & Grunze, M. (1999). Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography. Applied Physics Letters, 75(16), 2401-2403. doi:10.1063/1.125027.

Zitierlink: https://hdl.handle.net/21.11116/0000-0001-BA43-2

Zusammenfassung

We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold.