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Modification of thiol-derived self-assembling monolayers by electron and x-ray irradiation: Scientific and lithographic aspects

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Grunze,  M.
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Citation

Zharnikov, M., & Grunze, M. (2002). Modification of thiol-derived self-assembling monolayers by electron and x-ray irradiation: Scientific and lithographic aspects. Journal of Vacuum Science and Technology B, 20(5), 1793-1807. doi:10.1116/1.1514665.


Cite as: http://hdl.handle.net/21.11116/0000-0001-BE3A-9
Abstract
This article reviews recent experiments on the modification of thiol-derived self-assembling monolayers (SAMs) by electron and x-ray irradiation. Several complementary experimental techniques such as near-edge x-ray absorption fine structure spectroscopy, x-ray photoelectron spectroscopy and microscopy, and infrared reflection absorption spectroscopy were applied to gain a detailed knowledge on the nature and extent of irradiation-induced damage in these systems. The reaction of a SAM to electron and x-ray irradiation was found to be determined by the interplay of the damage/decomposition and cross-linking processes. Ways to adjust the balance between these two opposing effects by molecular engineering of the SAM constituents are demonstrated. The presented data provide the physical–chemical basis for electron-beam patterning of self-assembled monolayers to extend lithography down to the nanometer scale.