Depth distribution of irradiation-induced cross-linking in aromatic 
self-assembled monolayers

Tai, Y.; Shaporenko, A.; Eck, W.; Grunze, Michael; Zharnikov, M.

doi:10.1021/la040047o

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Depth distribution of irradiation-induced cross-linking in aromatic self-assembled monolayers

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Grunze, Michael
Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society;

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Citation

Tai, Y., Shaporenko, A., Eck, W., Grunze, M., & Zharnikov, M. (2004). Depth distribution of irradiation-induced cross-linking in aromatic self-assembled monolayers. Langmuir, 20(17), 7166-7170. doi:10.1021/la040047o.

Cite as: https://hdl.handle.net/21.11116/0000-0001-BE98-E

Abstract

Pristine and strongly irradiated self-assembled monolayers of [1,1':4',1' '-terphenyl]-4,4' '-dimethanethiol (TPDMT) on Au have been characterized by near-edge X-ray absorption fine structure spectroscopy using partial electron yield acquisition mode. The TPDMT films were found to be extremely stable toward electron irradiation, which is explained by cross-linking between the aromatic backbones. In addition, we assume that a large delocalization and a strong relaxation of the initial electronic excitations in the densely packed film contributed to the film stability. The data analysis implies an inhomogeneous distribution of the irradiation-induced dehydrogenation and cross-linking of the terphenyl moieties in the TPDMT film, being most pronounced close to the film-ambient interface. The inhomogeneity was explained by quenching of the electronically excited C-H states via dipole-dipole interaction with the states' image at the metal surface, which has a reduced probability with increasing separation from the metal surface. Generally, the results suggest the importance of relaxation processes for the response of self-assembled monolayers to ionizing radiation.