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Magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices: First principles calculations and Monte Carlo simulation

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Essaoudi,  I.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Ainane,  A.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Ahuja,  R.
Research Group of Molecular Organized Systems, MPI for biophysical chemistry, Max Planck Society;

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Citation

Bouziani, I., Benhouria, Y., Essaoudi, I., Ainane, A., & Ahuja, R. (2018). Magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices: First principles calculations and Monte Carlo simulation. Journal of Magnetism and Magnetic Materials, 466, 420-429. doi:10.1016/j.jmmm.2018.07.033.


Cite as: http://hdl.handle.net/21.11116/0000-0002-5BB2-F
Abstract
We have applied the first-principles calculations to investigate magnetoelectronic properties of Vanadium impurities co-doped (Cd, Cr)Te compound for spintronic devices. The ferromagnetic (FM) nature in (Cd, Cr)Te compound co-doped with V atoms has been found, and the mechanism responsible for this behavior has been considered to be the double exchange. Moreover, the Curie-temperature calculation reveals that the stability's field of the FM-phase rises with rising both the concentration of Cr and V atoms above ambient temperature. This system presents the half-metallic character where its polarization of spin is total at the Fermi level, and its total magnetic moment is principally induced by Cr and V elements. The spin-orbit coupling (SOC) typically play an important role in the electronic structure calculations due to both the concentration of Cr and V impurities. In addition to that, our results have been confirmed by the calculation of magnetization and susceptibility using the Monte Carlo simulation.