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A simple means of producing highly transparent graphene on sapphire using chemical vapor deposition on a copper catalyst.

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Yu,  H. K.
Department of Dynamics at Surfaces, MPI for biophysical chemistry, Max Planck Society;

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Wodtke,  A. M.
Department of Dynamics at Surfaces, MPI for biophysical chemistry, Max Planck Society;

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Citation

Anemone, G., Climent-Pascual, E., Al Taleb, A., Yu, H. K., Jimenez-Villacorta, F., Prieto, C., et al. (2018). A simple means of producing highly transparent graphene on sapphire using chemical vapor deposition on a copper catalyst. Carbon, 139, 593-598. doi:10.1016/j.carbon.2018.07.022.


Cite as: http://hdl.handle.net/21.11116/0000-0002-5F9C-5
Abstract
Chemical vapor deposition (CVD) is one of the best ways to scalably grow low cost, high quality graphene on metal substrates; unfortunately, it not ideal for producing graphene on dielectric substrates. Here, we demontrate production of a high quality graphene layer on Sapphire using CVD with a copper catalyst. The catalyst consists of a thin copper film grown epitaxially on alpha-Al2O3 (0001). After CVD growth of Graphene, the copper can be removed by simple evaporation in the presence of a carbon source (C2H4). We characterized the resulting graphene layer using Raman spectroscopy, atomic force microscopy (AFM), optical transmission and helium atom scattering (HAS). The sample exhibited a reduced Raman D peak and an excellent 2D to G ratio. AFM and HAS show large graphene domains over a macroscopic region. We measured > 86% transparency over the visible spectrum.