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Journal Article

Strongly Enhanced Berry Dipole at Topological Phase Transitions in BiTeI


Sodemann,  Inti
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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Facio I, J., Efremov, D., Koepernik, K., You, J.-S., Sodemann, I., & van den Brink, J. (2018). Strongly Enhanced Berry Dipole at Topological Phase Transitions in BiTeI. Physical Review Letters, 121(24): 246403. doi:10.1103/PhysRevLett.121.246403.

Cite as: http://hdl.handle.net/21.11116/0000-0002-BDEC-0
Transitions between topologically distinct electronic states have been predicted in different classes of materials and observed in some. A major goal is the identification of measurable properties that directly expose the topological nature of such transitions. Here, we focus on the giant Rashba material bismuth tellurium iodine which exhibits a pressure-driven phase transition between topological and trivial insulators in three dimensions. We demonstrate that this transition, which proceeds through an intermediate Weyl semimetallic state, is accompanied by a giant enhancement of the Berry curvature dipole which can be probed in transport and optoelectronic experiments. From first-principles calculations, we show that the Berry dipole-a vector along the polar axis of this material-has opposite orientations in the trivial and topological insulating phases and peaks at the insulator-to-Weyl critical points, at which the nonlinear Hall conductivity can increase by over 2 orders of magnitude.