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Understanding fundamental doping and stoichiometry limits in semiconductors by ab initio modelling

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Neugebauer,  Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J. (2018). Understanding fundamental doping and stoichiometry limits in semiconductors by ab initio modelling. Talk presented at EDS 2018 Conference. Thessaloniki, Greece. 2018-06-24 - 2018-06-29.


Cite as: http://hdl.handle.net/21.11116/0000-0003-0873-3
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