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Optical perturbation of the hole pockets in the underdoped high-Tc superconducting cuprates

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Rettig,  Laurenz
Fakultät für Physik und Center for Nanointegration (CENIDE), Universität Duisburg-Essen, Lotharstrasse 1, Duisburg, Germany;
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevB.99.081116.pdf
(Publisher version), 819KB

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Citation

Freutel, S., Rameau, J. D., Rettig, L., Avigo, I., Ligges, M., Yoshida, Y., et al. (2019). Optical perturbation of the hole pockets in the underdoped high-Tc superconducting cuprates. Physical Review B, 99(8): 081116(R). doi:10.1103/PhysRevB.99.081116.


Cite as: http://hdl.handle.net/21.11116/0000-0003-39CC-8
Abstract
The high-Tc superconducting cuprates are recognized as doped Mott insulators. Several studies indicate that as a function of doping and temperature, there is a crossover from this regime into a phase characterized as a marginal Fermi liquid. Several calculations of the doped Mott insulating phase indicate that the Fermi surface defines small pockets which at the higher doping levels switch to a full closed Fermi surface, characteristic of a more metallic system. Here we use femtosecond laser-based pump-probe techniques to investigate the structure of the Fermi surface in the underdoped region of Bi2Sr2CaCu2O8+δ and compare it with that associated with the optimally doped material. We confirm the concept of a small pocket in the underdoped system consistent with theoretical predictions in this strongly correlated state.