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Journal Article

Pressure tuning of the electrical transport properties in the Weyl semimetal TaP

MPS-Authors
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Besser,  M.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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dos Reis,  R. D.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Fan,  F.-R.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ajeesh,  M. O.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Sun,  Y.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Schmidt,  M.
Marcus Schmidt, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser,  C.
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Nicklas,  M.
Michael Nicklas, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Besser, M., dos Reis, R. D., Fan, F.-R., Ajeesh, M. O., Sun, Y., Schmidt, M., et al. (2019). Pressure tuning of the electrical transport properties in the Weyl semimetal TaP. Physical Review Materials, 3(4): 044201, pp. 1-6. doi:10.1103/PhysRevMaterials.3.044201.


Cite as: https://hdl.handle.net/21.11116/0000-0003-8C54-1
Abstract
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along the a direction of the tetragonal crystal structure. Only weak changes in the SdH frequencies for B parallel to a and B parallel to c point at a robust Fermi-surface topology. In contrast to the stability of the Fermi-surface topology and of the density of charge carriers, our results evidence a strong pressure variation of the magnitude of transverse magnetoresistance for B parallel to a contrary to the results for B parallel to c. We can relate the former to an increase in the charge-carrier mobilities along the crystallographic c direction.