Electronic structures and unusually robust bandgap in an ultrahigh-mobility 
layered oxide semiconductor, Bi2O2Se

Chen, Cheng; Wang, Meixiao; Wu, Jinxiong; Fu, Huixia; Yang, Haifeng; Tian, Zhen; Tu, Teng; Peng, Han; Sun, Yan; Xu, Xiang; Jiang, Juan; Schröter, Niels B. M.; Li, Yiwei; Pei, Ding; Liu, Shuai; Ekahana, Sandy A.; Yuan, Hongtao; Xue, Jiamin; Li, Gang; Jia, Jinfeng; Liu, Zhongkai; Yan, Binghai; Peng, Hailin; Chen, Yulin

doi:10.1126/sciadv.aat8355

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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se

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Sun, Yan
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chen, C., Wang, M., Wu, J., Fu, H., Yang, H., Tian, Z., et al. (2018). Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se. Science Advances, 4(9): eaat8355, pp. 1-6. doi:10.1126/sciadv.aat8355.

Cite as: https://hdl.handle.net/21.11116/0000-0003-AB48-C

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