English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films

MPS-Authors
/persons/resource/persons211515

Markou,  Anastasios
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons200069

Ernst,  Benedikt
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons129679

Kalache,  Adel
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

/persons/resource/persons126601

Felser,  Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Taylor, J. M., Lesne, E., Markou, A., Dejene, F. K., Ernst, B., Kalache, A., et al. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn3Ir thin films. Physical Review Materials, 3(7): 074409, pp. 1-12. doi:10.1103/PhysRevMaterials.3.074409.


Cite as: https://hdl.handle.net/21.11116/0000-0004-728E-C
Abstract
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic gamma-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115 erg cm(-2) or 11.5 nJ cm(-2)) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.