Epitaxial growth, structural characterization, and exchange bias of 
noncollinear antiferromagnetic Mn3Ir thin films

Taylor, James M.; Lesne, Edouard; Markou, Anastasios; Dejene, Fasil Kidane; Ernst, Benedikt; Kalache, Adel; Rana, Kumari Gaurav; Kumar, Neeraj; Werner, Peter; Felser, Claudia; Parkin, Stuart S. P.

doi:10.1103/PhysRevMaterials.3.074409

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Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn₃Ir thin films

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Markou, Anastasios
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Ernst, Benedikt
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Kalache, Adel
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Felser, Claudia
Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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引用

Taylor, J. M., Lesne, E., Markou, A., Dejene, F. K., Ernst, B., Kalache, A., Rana, K. G., Kumar, N., Werner, P., Felser, C., & Parkin, S. S. P. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic Mn₃Ir thin films. Physical Review Materials, 3(7):, pp. 1-12. doi:10.1103/PhysRevMaterials.3.074409.

引用: https://hdl.handle.net/21.11116/0000-0004-728E-C

要旨

Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic gamma-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115 erg cm(-2) or 11.5 nJ cm(-2)) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.