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Journal Article

Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2

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Medvedev,  S. A.
Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Naumov,  P. G.
Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Baskakov, A. O., Ogarkova, Y. L., Lyubutin, I. S., Starchikov, S. S., Ksenofontov, V., Shylin I, S., et al. (2019). Pressure-Induced Semiconductor-Semimetal Transition in Rb0.8Fe1.6S2. JETP Letters, 109(8), 536-540. doi:10.1134/S0021364019080058.


Cite as: https://hdl.handle.net/21.11116/0000-0004-7582-5
Abstract
The transport and magnetic properties of the Rb0.8Fe1.6S2 crystal have been studied under quasihydrostatic compression to a pressure of 40.5 GPa in diamond anvil cells. A semiconductor-semimetal electronic transition has been detected at a pressure of about 15 GPa. In addition, the disappearance of the magnetic order down to a temperature of 3 K has been found at a pressure of 24 GPa. It has been shown that, in contrast to a similar selenium compound Rb0.8Fe1.6Se2, superconductivity in Rb0.8Fe1.6S2 sulfide does not appear down to the lowest temperatures even at an external pressure of 40.5 GPa.